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Identification of the isolated arsenic antisite defect in electron-irradiated gallium arsenide and its relation to the EL2 defect.
1992
Krambrock, and Spaeth, and Delerue, and Allan, and Lannoo
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Krambrock, and Spaeth, and Delerue, and Allan, and Lannoo
Identification of the 0.82-eV electron trap, EL2 in GaAs, as an isolated antisite arsenic defect.
November 1985, Physical review letters,
Krambrock, and Spaeth, and Delerue, and Allan, and Lannoo
Isolated arsenic-antisite defect in GaAs and the properties of EL2.
November 1989, Physical review. B, Condensed matter,
Krambrock, and Spaeth, and Delerue, and Allan, and Lannoo
Arsenic antisite defect AsGa and EL2 in GaAs.
July 1987, Physical review. B, Condensed matter,
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Photoluminescence transitions of the deep EL2 defect in gallium arsenide.
October 1990, Physical review letters,
Krambrock, and Spaeth, and Delerue, and Allan, and Lannoo
Identification of the arsenic-antisite-arsenic-vacancy complex in electron-irradiated GaAs.
July 1986, Physical review. B, Condensed matter,
Krambrock, and Spaeth, and Delerue, and Allan, and Lannoo
Isolated As antisite in GaAs: Possibility of the EL2 defect.
October 1989, Physical review. B, Condensed matter,
Krambrock, and Spaeth, and Delerue, and Allan, and Lannoo
Photoluminescence studies of the EL2 defect in gallium arsenide under external perturbations.
July 1991, Physical review letters,
Krambrock, and Spaeth, and Delerue, and Allan, and Lannoo
Cation antisite defects and antisite-interstitial complexes in gallium arsenide.
April 1990, Physical review letters,
Krambrock, and Spaeth, and Delerue, and Allan, and Lannoo
Optical identification of the gallium vacancy in neutron-irradiated gallium arsenide.
July 1994, Physical review. B, Condensed matter,
Krambrock, and Spaeth, and Delerue, and Allan, and Lannoo
X-ray diffraction examinations of EL2-like defect metastability in low-temperature gallium arsenide.
April 1996, Physical review. B, Condensed matter,
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