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Defects in plastically deformed semiconductors studied by positron annihilation: Silicon and germanium.
1993
Krause-Rehberg, and Brohl, and Leipner, and Drost, and Polity, and Beyer, and Alexander
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Krause-Rehberg, and Brohl, and Leipner, and Drost, and Polity, and Beyer, and Alexander
Positron study of defects in as-grown and plastically deformed GaAs:Te.
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Electrical properties of dislocations and point defects in plastically deformed silicon.
November 1985, Physical review. B, Condensed matter,
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Antisite-related defects in plastically deformed GaAs.
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Oxygen-related defects in Si studied by variable-energy positron annihilation spectroscopy.
May 1996, Physical review. B, Condensed matter,
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Positron annihilation study of deformed silver.
June 1988, Physical review. B, Condensed matter,
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Dislocation-related electroluminescence at room temperature in plastically deformed silicon.
April 1995, Physical review. B, Condensed matter,
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Positron annihilation on defects in silicon irradiated with 15 MeV protons.
January 2013, Journal of physics. Condensed matter : an Institute of Physics journal,
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Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation.
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Fermi surface of lithium studied by positron annihilation.
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