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InAs quantum-dot laser utilizing GaAs photonic-crystal line-defect waveguide. 2004

Kuon Inoue, and Hidekazu Sasaki, and Koji Ishida, and Yoshimasa Sugimoto, and Naoki Ikeda, and Yu Tanaka, and Shunsuke Ohkouchi, and Yusui Nakamura, and Kiyoshi Asakawa

We have observed laser action from optically-pumped InAs-quantum-dots embedded in a line-defect waveguide in an air-bridge type GaAs-photonic-crystal slab (an array of air-holes). The lasing is found to occur without any optical cavity such as a set of Fabry-Perot mirrors. Comparison of the observed transmittance spectrum with the calculated band dispersion of the W3 defect-mode enables us to specify the lasing wavelength as that at the band edge. From this fact it follows that distributed feedback mechanism at the band edge with a vanishingly small group-velocity should be responsible for the present lasing. Usefulness of this kind of compact laser in a future ultrafast planar photonic integrated circuit is discussed.

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