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InAs/InSb nanowire heterostructures grown by chemical beam epitaxy. 2009
Daniele Ercolani, and
Francesca Rossi, and
Ang Li, and
Stefano Roddaro, and
Vincenzo Grillo, and
Giancarlo Salviati, and
Fabio Beltram, and
Lucia Sorba
NEST, Scuola Normale Superiore and CNR-INFM, Piazza S. Silvestro 12, I-56127 Pisa, Italy. daniele.ercolani@sns.it
We report the Au-assisted chemical beam epitaxy growth of defect-free zincblende InSb nanowires. The grown InSb segments are the upper sections of InAs/InSb heterostructures on InAs(111)B substrates. We show, through HRTEM analysis, that zincblende InSb can be grown without any crystal defects such as stacking faults or twinning planes. Strain-map analysis demonstrates that the InSb segment is nearly relaxed within a few nanometers from the interface. By post-growth studies we have found that the catalyst particle composition is AuIn(2), and it can be varied to a AuIn alloy by cooling down the samples under TDMASb flux.
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