Structural and chemical characterization of Mn doped GaN nanowires by X-ray absorption spectroscopy. 2009

Han-Kyu Seong, and Ungkil Kim, and Myoung-Ha Kim, and Hyun-Hwi Lee, and Dong-Ryeol Lee, and Jae-Young Kim, and Heon-Jin Choi
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.

We report on structural chemical state of doped Mn atoms in single crylstalline Mn doped GaN nanowires by X-ray absorption spectroscopy. Anomalous X-ray scattering and K-edge X-ray absorption fine structure measurement make it clear that Mn atoms substitute the Ga sites and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Mn L(2,3)-edges show that doped Mn has local magnetic moment and the electronic configuration of the doped Mn is mainly 3d(5) component. The structural and chemical states of the doped Mn atoms imply that they ascribe to the observed ferromagnetism in these diluted magnetic semiconductor nanowires.

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