BIOMAT Database Logo BIOMAT Database Logo

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator. 2013

Denis E Presnov, and Sergey V Amitonov, and Pavel A Krutitskii, and Valentina V Kolybasova, and Igor A Devyatov, and Vladimir A Krupenin, and Igor I Soloviev
Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow 119991, Russia ; Laboratory of Cryoelectronics, Lomonosov Moscow State University, Moscow 119991, Russia.

BACKGROUND An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented. RESULTS A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode. CONCLUSIONS The sensitivity obtained for our sensor built in the CMOS-compatible top-down approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip.

UI MeSH Term Description Entries

Related Publications

Denis E Presnov, and Sergey V Amitonov, and Pavel A Krutitskii, and Valentina V Kolybasova, and Igor A Devyatov, and Vladimir A Krupenin, and Igor I Soloviev
Silicon nanowire field-effect-transistor based biosensors: from sensitive to ultra-sensitive.
October 2014, Biosensors & bioelectronics,
Denis E Presnov, and Sergey V Amitonov, and Pavel A Krutitskii, and Valentina V Kolybasova, and Igor A Devyatov, and Vladimir A Krupenin, and Igor I Soloviev
Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor.
June 2021, Sensors (Basel, Switzerland),
Denis E Presnov, and Sergey V Amitonov, and Pavel A Krutitskii, and Valentina V Kolybasova, and Igor A Devyatov, and Vladimir A Krupenin, and Igor I Soloviev
Junction field-effect-transistor-based germanium photodetector on silicon-on-insulator.
May 2008, Optics letters,
Denis E Presnov, and Sergey V Amitonov, and Pavel A Krutitskii, and Valentina V Kolybasova, and Igor A Devyatov, and Vladimir A Krupenin, and Igor I Soloviev
Top-down fabricated silicon-nanowire-based field-effect transistor device on a (111) silicon wafer.
February 2013, Small (Weinheim an der Bergstrasse, Germany),
Denis E Presnov, and Sergey V Amitonov, and Pavel A Krutitskii, and Valentina V Kolybasova, and Igor A Devyatov, and Vladimir A Krupenin, and Igor I Soloviev
Biosensor based on a silicon nanowire field-effect transistor functionalized by gold nanoparticles for the highly sensitive determination of prostate specific antigen.
February 2017, Biosensors & bioelectronics,
Denis E Presnov, and Sergey V Amitonov, and Pavel A Krutitskii, and Valentina V Kolybasova, and Igor A Devyatov, and Vladimir A Krupenin, and Igor I Soloviev
Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics.
December 2011, The Analyst,
Denis E Presnov, and Sergey V Amitonov, and Pavel A Krutitskii, and Valentina V Kolybasova, and Igor A Devyatov, and Vladimir A Krupenin, and Igor I Soloviev
Silicon-based ion-sensitive field-effect transistor shows negligible dependence on salt concentration at constant pH.
April 2012, Chemphyschem : a European journal of chemical physics and physical chemistry,
Denis E Presnov, and Sergey V Amitonov, and Pavel A Krutitskii, and Valentina V Kolybasova, and Igor A Devyatov, and Vladimir A Krupenin, and Igor I Soloviev
A silicon carbide nanowire field effect transistor for DNA detection.
June 2016, Nanotechnology,
Denis E Presnov, and Sergey V Amitonov, and Pavel A Krutitskii, and Valentina V Kolybasova, and Igor A Devyatov, and Vladimir A Krupenin, and Igor I Soloviev
Optimized operation of silicon nanowire field effect transistor sensors.
December 2014, Nanotechnology,
Denis E Presnov, and Sergey V Amitonov, and Pavel A Krutitskii, and Valentina V Kolybasova, and Igor A Devyatov, and Vladimir A Krupenin, and Igor I Soloviev
Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor.
August 2020, Journal of nanoscience and nanotechnology,
Copied contents to your clipboard!