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Transport properties of monolayer MoS2 grown by chemical vapor deposition. 2014

Hennrik Schmidt, and Shunfeng Wang, and Leiqiang Chu, and Minglin Toh, and Rajeev Kumar, and Weijie Zhao, and A H Castro Neto, and Jens Martin, and Shaffique Adam, and Barbaros Özyilmaz, and Goki Eda
Graphene Research Centre, National University of Singapore , 6 Science Drive 2, Singapore 117546.

Recent success in the growth of monolayer MoS2 via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS2. The devices show low temperature mobilities up to 500 cm(2) V(-1) s(-1) and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of optical phonons as a limiting factor is discussed.

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