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On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes. 2014
Zi-Hui Zhang, and
Wei Liu, and
Swee Tiam Tan, and
Zhengang Ju, and
Yun Ji, and
Zabu Kyaw, and
Xueliang Zhang, and
Namig Hasanov, and
Binbin Zhu, and
Shunpeng Lu, and
Yiping Zhang, and
Xiao Wei Sun, and
Hilmi Volkan Demir
Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far. In this work, we theoretically propose and experimentally demonstrate an electron mean-free-path model, which reveals the InGaN EC reduces the electron mean free path in MQWs, increases the electron capture rate and also reduces the valence band barrier heights of the MQWs, in turn promoting the hole transport into MQWs.
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