A variation of transmission electron microscope sample preparation for VLSI analysis. 1989

M C Madden, and P Crafard
Intel Corporation, Santa Clara, California 95052-8126.

Sample preparation for VLSI analysis is often slow due to long ion milling time and because the location of the thin area of the sample is difficult to control. By modifying the standard techniques used with a VCR Group (and perhaps other) mechanical dimpler, the ion milling time can be reduced to less than 30 min. and the location on the thinned area reasonably controlled. These modifications involve the use of a radiused edge on the dimpling tool, a rubber O-ring on the polishing tool, and not rotating the sample platen during polishing. The modifications to the dimpling and polishing tools allow more control of the geometry of the dimple, while not rotating the sample platen allows a thinner sample to be produced and permits the use of the sample translation micrometers to shift the location of the thinned area during polishing. The quality of samples produced using this modified procedure is equivalent to that obtained with the more standard methods.

UI MeSH Term Description Entries
D008670 Metals Electropositive chemical elements characterized by ductility, malleability, luster, and conductance of heat and electricity. They can replace the hydrogen of an acid and form bases with hydroxyl radicals. (Grant & Hackh's Chemical Dictionary, 5th ed) Metal
D008854 Microscopy, Electron Microscopy using an electron beam, instead of light, to visualize the sample, thereby allowing much greater magnification. The interactions of ELECTRONS with specimens are used to provide information about the fine structure of that specimen. In TRANSMISSION ELECTRON MICROSCOPY the reactions of the electrons that are transmitted through the specimen are imaged. In SCANNING ELECTRON MICROSCOPY an electron beam falls at a non-normal angle on the specimen and the image is derived from the reactions occurring above the plane of the specimen. Electron Microscopy

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