Self-assembly of silicon nanowires studied by advanced transmission electron microscopy. 2017

Marta Agati, and Guillaume Amiard, and Vincent Le Borgne, and Paola Castrucci, and Richard Dolbec, and Maurizio De Crescenzi, and My Alì El Khakani, and Simona Boninelli
Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, Catania 95123, Italy; CNR IMM-MATIS, Via S. Sofia 64, Catania 95123, Italy; Institut national de la recherche scientifique, Centre-Énergie, Matériaux et Télécommunications (INRS-EMT), 1650 Blvd. Lionel Boulet, Varennes QC-J3X 1S2, Canada.

Scanning transmission electron microscopy (STEM) was successfully applied to the analysis of silicon nanowires (SiNWs) that were self-assembled during an inductively coupled plasma (ICP) process. The ICP-synthesized SiNWs were found to present a Si-SiO2 core-shell structure and length varying from ≈100 nm to 2-3 μm. The shorter SiNWs (maximum length ≈300 nm) were generally found to possess a nanoparticle at their tip. STEM energy dispersive X-ray (EDX) spectroscopy combined with electron tomography performed on these nanostructures revealed that they contain iron, clearly demonstrating that the short ICP-synthesized SiNWs grew via an iron-catalyzed vapor-liquid-solid (VLS) mechanism within the plasma reactor. Both the STEM tomography and STEM-EDX analysis contributed to gain further insight into the self-assembly process. In the long-term, this approach might be used to optimize the synthesis of VLS-grown SiNWs via ICP as a competitive technique to the well-established bottom-up approaches used for the production of thin SiNWs.

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