Single-mode semiconductor lasers fabricated by standard photolithography for direct modulation. 2019

Pijie Ma, and Anjin Liu, and Fengxin Dong, and Mingjin Wang, and Wanhua Zheng

The output characteristics, modal properties, far-field profiles, and dynamic modulation responses of semiconductor lasers with surface higher-order gratings fabricated by the standard photolithography are presented. Single-mode semiconductor lasers with 20th- and 37th-order gratings for the 1.55 µm wavelength range are realized. The single-mode semiconductor lasers with 20th-order gratings have lower threshold currents and higher slope efficiencies than those with 37th-order gratings. The surface higher-order grating placed closed to the output facet can deteriorate the vertical far-field profile of the semiconductor laser. However, the properties of the semiconductor laser's single-mode operation are not affected by the surface higher-order grating's position in the ridge waveguide. The -3 dB bandwidth of these single-mode semiconductor lasers can achieve 9 GHz at 100 mA, which is the highest, to the best of our knowledge, for such a kind of single-mode semiconductor laser with a surface higher-order grating.

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