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Tunnel Field Effect Transistor with Ferroelectric Gate Insulator. 2019
Kitae Lee, and
Junil Lee, and
Sihyun Kim, and
Euyhwan Park, and
Ryoongbin Lee, and
Hyun-Min Kim, and
Sangwan Kim, and
Byung-Gook Park
Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.
Ferroelectric tunnel field effect transistor (Fe-TFET) having improved DC performance in comparison to the conventional TFET (c-TFET) is proposed and investigated through the technology computer-aided design (TCAD) simulation. By inserting ferroelectric material into the gate insulator of TFET, enhanced on-current (Ion) is obtained. It is attributed to the polarization characteristic of the ferroelectric materials which brings the capacitance boosting effect. Through the TCAD simulation, the characteristics of the ferroelectric material for the optimal performance conditions are also studied.
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