BIOMAT Database Logo BIOMAT Database Logo

Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays. 2019

Ha Quoc Thang Bui, and Ravi Teja Velpula, and Barsha Jain, and Omar Hamed Aref, and Hoang-Duy Nguyen, and Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, USA.

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

UI MeSH Term Description Entries

Related Publications

Ha Quoc Thang Bui, and Ravi Teja Velpula, and Barsha Jain, and Omar Hamed Aref, and Hoang-Duy Nguyen, and Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen
Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy.
September 2010, Nano letters,
Ha Quoc Thang Bui, and Ravi Teja Velpula, and Barsha Jain, and Omar Hamed Aref, and Hoang-Duy Nguyen, and Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen
Full color-tunable vertically stacked quantum dot light emitting diodes for next-generation displays and lighting.
December 2020, Nanoscale,
Ha Quoc Thang Bui, and Ravi Teja Velpula, and Barsha Jain, and Omar Hamed Aref, and Hoang-Duy Nguyen, and Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen
Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots.
October 2016, Scientific reports,
Ha Quoc Thang Bui, and Ravi Teja Velpula, and Barsha Jain, and Omar Hamed Aref, and Hoang-Duy Nguyen, and Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen
Color control of nanowire InGaN/GaN light emitting diodes by post-growth treatment.
November 2015, Nanotechnology,
Ha Quoc Thang Bui, and Ravi Teja Velpula, and Barsha Jain, and Omar Hamed Aref, and Hoang-Duy Nguyen, and Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen
Transfer-printed, tandem microscale light-emitting diodes for full-color displays.
May 2021, Proceedings of the National Academy of Sciences of the United States of America,
Ha Quoc Thang Bui, and Ravi Teja Velpula, and Barsha Jain, and Omar Hamed Aref, and Hoang-Duy Nguyen, and Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen
Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.
December 2015, Nanoscale research letters,
Ha Quoc Thang Bui, and Ravi Teja Velpula, and Barsha Jain, and Omar Hamed Aref, and Hoang-Duy Nguyen, and Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen
Single nanowire green InGaN/GaN light emitting diodes.
October 2016, Nanotechnology,
Ha Quoc Thang Bui, and Ravi Teja Velpula, and Barsha Jain, and Omar Hamed Aref, and Hoang-Duy Nguyen, and Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen
Advantages of blue InGaN light-emitting diodes with AlGaN barriers.
May 2010, Optics letters,
Ha Quoc Thang Bui, and Ravi Teja Velpula, and Barsha Jain, and Omar Hamed Aref, and Hoang-Duy Nguyen, and Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen
Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy.
March 2019, Nanotechnology,
Ha Quoc Thang Bui, and Ravi Teja Velpula, and Barsha Jain, and Omar Hamed Aref, and Hoang-Duy Nguyen, and Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen
Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy.
May 2010, Nanotechnology,
Copied contents to your clipboard!