Highly Enhanced Gas Sensing Performance Using a 1T/2H Heterophase MoS2 Field-Effect Transistor at Room Temperature. 2020

Boyang Zong, and Qiuju Li, and Xiaoyan Chen, and Chengbin Liu, and Liangchun Li, and Jian Ruan, and Shun Mao
Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai 200092, China.

Monolayer MoS2 (ML-MoS2) with various polymorphic phases attracts growing interests for device applications in recent years. Herein, a field-effect transistor (FET) gas sensor is developed on the basis of monolayer MoS2 with a heterophase of a 1T metallic phase and a 2H semiconducting phase. Lithium-exfoliated MoS2 nanosheets own a monolayer structure with rich active sites for gas adsorption. With thermal annealing from 50 to 300 °C, the initial lithium-exfoliated 1T-phase MoS2 gradually transforms into the 2H phase, during which the 1T and 2H heterophases can be modulated. The 1T/2H heterophase MoS2 shows p-type semiconducting properties and prominent adsorption capability for NO2 molecules. The highest response is observed for 100 °C annealed MoS2 of a 40% 1T phase and a 60% 2H phase, which shows a sensitivity up to 25% toward 2 ppm NO2 at room temperature in a very short time (10 s) and a lower limit of detection down to 25 ppb. This study demonstrates that the gas detection capability of ML-MoS2 could be boosted with the heterophase construction, which brings new insights into transition-metal dichalcogenide gas sensors.

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