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Ag-doped InP/ZnS quantum dots for type-I photosensitizers. 2023
Can Ren, and
Die Hu, and
Yanyan Cui, and
Peixian Chen, and
Xiaoqian Xu, and
Jiaji Cheng, and
Tingchao He
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China. tche@szu.edu.cn.
Water-soluble Ag-doped InP/ZnS quantum dots (QDs) with high photoluminescence quantum yield were synthesized and characterized. Their maximum two- and three-photon absorption cross sections are determined as ∼1.7 × 104 GM at 820 nm and ∼1.7 × 10-76 cm6 s2 photon-2 at 1260 nm. Importantly, for the first time, we demonstrated that Ag-doped InP/ZnS QDs can be used for type-I photodynamic therapy and are more suitable for the hypoxic environment of tumors.
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