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Proximity-induced superconductivity in epitaxial topological insulator/graphene/gallium heterostructures. 2023

Cequn Li, and Yi-Fan Zhao, and Alexander Vera, and Omri Lesser, and Hemian Yi, and Shalini Kumari, and Zijie Yan, and Chengye Dong, and Timothy Bowen, and Ke Wang, and Haiying Wang, and Jessica L Thompson, and Kenji Watanabe, and Takashi Taniguchi, and Danielle Reifsnyder Hickey, and Yuval Oreg, and Joshua A Robinson, and Cui-Zu Chang, and Jun Zhu
Department of Physics, The Pennsylvania State University, University Park, PA, USA.

The introduction of superconductivity to the Dirac surface states of a topological insulator leads to a topological superconductor, which may support topological quantum computing through Majorana zero modes1,2. The development of a scalable material platform is key to the realization of topological quantum computing3,4. Here we report on the growth and properties of high-quality (Bi,Sb)2Te3/graphene/gallium heterostructures. Our synthetic approach enables atomically sharp layers at both hetero-interfaces, which in turn promotes proximity-induced superconductivity that originates in the gallium film. A lithography-free, van der Waals tunnel junction is developed to perform transport tunnelling spectroscopy. We find a robust, proximity-induced superconducting gap formed in the Dirac surface states in 5-10 quintuple-layer (Bi,Sb)2Te3/graphene/gallium heterostructures. The presence of a single Abrikosov vortex, where the Majorana zero modes are expected to reside, manifests in discrete conductance changes. The present material platform opens up opportunities for understanding and harnessing the application potential of topological superconductivity.

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