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Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates. 2023
Florian Pantle, and
Fabian Becker, and
Max Kraut, and
Simon Wörle, and
Theresa Hoffmann, and
Sabrina Artmeier, and
Martin Stutzmann
Walter Schottky Institut and Physics Department, Technische Universität München Am Coulombwall 4 85748 Garching Germany florian.pantle@wsi.tum.de stutz@wsi.tum.de.
[This corrects the article DOI: 10.1039/D1NA00221J.].
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