BIOMAT Database Logo BIOMAT Database Logo

Chemically Amplified Molecular Glass Photoresist Regulated by 2-Aminoanthracene Additive for Electron Beam Lithography and Extreme Ultraviolet Lithography. 2023

Siliang Zhang, and Long Chen, and Jiaxing Gao, and Xuewen Cui, and Xue Cong, and Xudong Guo, and Rui Hu, and Shuangqing Wang, and Jinping Chen, and Yi Li, and Guoqiang Yang
Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.

2-Aminoanthracene was used as a nucleophilic additive in a molecular glass photoresist, bisphenol A derivative (BPA-6-epoxy), to improve advanced lithography performance. The effect of 2-aminoanthracene on BPA-6-epoxy was studied by electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL). The result indicates that the additive can optimize the pattern outline by regulating epoxy cross-linking reaction, avoiding photoresist footing effectively in EBL. The EUVL result demonstrates that 2-aminoanthracene can significantly reduce line width roughness (LWR) for HP (Half-Pitch) 25 nm (from 4.9 to 3.8 nm) and HP 22 nm (from 6.9 to 3.0 nm). The power spectrum density (PSD) curve further confirms the reduction of roughness at medium and high frequency for HP 25 nm and the whole range of frequency for HP 22 nm, respectively. The study offers useful guidelines to improve the roughness of a chemically amplified molecular glass photoresist with epoxy groups for electron beam lithography and extreme ultraviolet lithography.

UI MeSH Term Description Entries

Related Publications

Siliang Zhang, and Long Chen, and Jiaxing Gao, and Xuewen Cui, and Xue Cong, and Xudong Guo, and Rui Hu, and Shuangqing Wang, and Jinping Chen, and Yi Li, and Guoqiang Yang
Negative-tone molecular glass photoresist for high-resolution electron beam lithography.
March 2021, Royal Society open science,
Siliang Zhang, and Long Chen, and Jiaxing Gao, and Xuewen Cui, and Xue Cong, and Xudong Guo, and Rui Hu, and Shuangqing Wang, and Jinping Chen, and Yi Li, and Guoqiang Yang
Combinatorial optimization of a molecular glass photoresist system for electron beam lithography.
December 2011, Advanced materials (Deerfield Beach, Fla.),
Siliang Zhang, and Long Chen, and Jiaxing Gao, and Xuewen Cui, and Xue Cong, and Xudong Guo, and Rui Hu, and Shuangqing Wang, and Jinping Chen, and Yi Li, and Guoqiang Yang
Positive Role of Iodine Atoms in Chemically Amplified Photoresists for Extreme Ultraviolet Lithography.
December 2025, ACS applied materials & interfaces,
Siliang Zhang, and Long Chen, and Jiaxing Gao, and Xuewen Cui, and Xue Cong, and Xudong Guo, and Rui Hu, and Shuangqing Wang, and Jinping Chen, and Yi Li, and Guoqiang Yang
Patterning of tailored polycarbonate based non-chemically amplified resists using extreme ultraviolet lithography.
August 2010, Macromolecular rapid communications,
Siliang Zhang, and Long Chen, and Jiaxing Gao, and Xuewen Cui, and Xue Cong, and Xudong Guo, and Rui Hu, and Shuangqing Wang, and Jinping Chen, and Yi Li, and Guoqiang Yang
Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications.
January 2017, ACS applied materials & interfaces,
Siliang Zhang, and Long Chen, and Jiaxing Gao, and Xuewen Cui, and Xue Cong, and Xudong Guo, and Rui Hu, and Shuangqing Wang, and Jinping Chen, and Yi Li, and Guoqiang Yang
Universal direct patterning of colloidal quantum dots by (extreme) ultraviolet and electron beam lithography.
May 2020, Nanoscale,
Siliang Zhang, and Long Chen, and Jiaxing Gao, and Xuewen Cui, and Xue Cong, and Xudong Guo, and Rui Hu, and Shuangqing Wang, and Jinping Chen, and Yi Li, and Guoqiang Yang
A chemically amplified fullerene-derivative molecular electron-beam resist.
December 2007, Small (Weinheim an der Bergstrasse, Germany),
Siliang Zhang, and Long Chen, and Jiaxing Gao, and Xuewen Cui, and Xue Cong, and Xudong Guo, and Rui Hu, and Shuangqing Wang, and Jinping Chen, and Yi Li, and Guoqiang Yang
Mechanisms of acid generation from ionic photoacid generators for extreme ultraviolet and electron beam lithography.
May 2024, Physical chemistry chemical physics : PCCP,
Siliang Zhang, and Long Chen, and Jiaxing Gao, and Xuewen Cui, and Xue Cong, and Xudong Guo, and Rui Hu, and Shuangqing Wang, and Jinping Chen, and Yi Li, and Guoqiang Yang
A new chemically amplified resist for high resolution patterning by E-beam lithography.
November 2010, Journal of nanoscience and nanotechnology,
Siliang Zhang, and Long Chen, and Jiaxing Gao, and Xuewen Cui, and Xue Cong, and Xudong Guo, and Rui Hu, and Shuangqing Wang, and Jinping Chen, and Yi Li, and Guoqiang Yang
Large refractive index changes of a chemically amplified photoresist in femtosecond laser nonlinear lithography.
April 2011, Optics express,
Copied contents to your clipboard!