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All-Silicon Polarization-Insensitive Metamaterial Absorber in the Terahertz Range. 2024

Zongcheng Xu, and Yujie Li, and Bin Han, and Yue Wang, and Quan Yuan, and Yanan Li, and Weiyan He, and Junhua Hao, and Liang Wu, and Jianquan Yao
Department of Physics, Tianjin Renai College, Tianjin 301636, China.

All-silicon terahertz absorbers have attracted considerable interest. We present a design and numerical study of an all-silicon polarization-insensitive terahertz metamaterial absorber. The meta-atoms of the metamaterial absorber are square silicon rings which can be viewed as gratings. By properly optimizing the structure of the meta-atom, we achieve a broadband absorptivity that is above 90% ranging from 0.77 THz to 2.53 THz, with a relative bandwidth of 106.7%. Impedance matching reduces the reflection of the terahertz waves and the (0, ±1)-order diffraction induce the strong absorption. The absorption of this absorber is insensitive to the polarization of the terahertz wave and has a large incident angle tolerance of up to 60 degrees. The all-silicon metamaterial absorber proposed here provides an effective way to obtain broadband absorption in the terahertz regime. Metamaterial absorbers have outstanding applications in terahertz communication and imaging.

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