BIOMAT Database Logo BIOMAT Database Logo

Electronic properties of sulfur-treated GaAs(001) surfaces. 1990

Ren, and Chang

UI MeSH Term Description Entries

Related Publications

Ren, and Chang
First-principles study of sulfur passivation of GaAs(001) surfaces.
December 1990, Physical review. B, Condensed matter,
Ren, and Chang
Sulfide-passivated GaAs (001). II. Electronic properties.
February 1996, Physical review. B, Condensed matter,
Ren, and Chang
Electronic structure of GaAs(001).
May 1990, Physical review. B, Condensed matter,
Ren, and Chang
Electronic properties of adsorbates on GaAs(001)-c(2x8)/(2x4).
October 2007, The Journal of chemical physics,
Ren, and Chang
Electronic properties of monolayer steps on (2 x 4)/c(2 x 8) reconstructed GaAs(001) surfaces.
August 1996, Physical review. B, Condensed matter,
Ren, and Chang
Sulfur passivation of GaAs surfaces.
September 1991, Physical review. B, Condensed matter,
Ren, and Chang
Structure and composition of GaAs(001) surfaces.
November 1992, Physical review letters,
Ren, and Chang
Influence of pressure on (001)GaAs surfaces.
January 1993, Physical review. B, Condensed matter,
Ren, and Chang
Structure of the sulfur-passivated GaAs(001) surface.
August 1994, Physical review. B, Condensed matter,
Ren, and Chang
Electronic Properties of Sulfur Covered Ru(0001) Surfaces.
March 2018, The journal of physical chemistry. A,
Copied contents to your clipboard!