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Gallium arsenide metal-semiconductor-metal photodiodes as optoelectronic mixers for microwave single-sideband modulation. 1998

G W Anderson, and L E Chipman, and F J Kub, and D Park, and M Y Frankel, and T F Carruthers, and J A Modolo, and K D Hobart, and D S Katzer
Naval Research Laboratory, Washington, D.C. 20375-5347, USA.

Gallium arsenide (GaAs) metal-semiconductor-metal (MSM) photodetectors have unique properties including high-bandwidth, linearity, and biphase response that make them suitable as mixers and programmable weights for microwave and communications applications. An optical technique for microwave single-sideband modulation that uses GaAs MSM photodiodes as mixers is reported. It uses MSM Schottky photodiodes formed in a GaAs/Al(0.3)Ga(0.7)As materials system to detect microwave in-phase and quadrature signals on optical carriers. Modulation of the photodetector bias voltages results in a single-sideband modulation of the microwave signal. Radio frequency and undesired-sideband suppression of 36 and 27 dB, respectively, were achieved. The optical wavelength was 850 nm, and the bandwidth of the photodetectors was > or = 29 GHz.

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