Grain wall boundaries in centimeter-scale continuous monolayer WS2 film grown by chemical vapor deposition. 2018

Zhiyan Jia, and Wentao Hu, and Jianyong Xiang, and Fusheng Wen, and Anmin Nie, and Congpu Mu, and Zhisheng Zhao, and Bo Xu, and Yongjun Tian, and Zhongyuan Liu
State Key Lab of Metastable Materials Science & Technology and Key Laboratory for Microstructure Material Physics of Hebei Province, Yanshan University, Qinhuangdao 066004, People's Republic of China.

Centimeter-scale continuous monolayer WS2 film with large tensile strain has been successfully grown on oxidized silicon substrate by chemical vapor deposition, in which monolayer grains can be more than 200 μm in size. Monolayer WS2 grains are observed to merge together via not only traditional grain boundaries but also non-traditional ones, which are named as grain walls (GWs) due to their nanometer-scale widths. The GWs are revealed to consist of two or three layers. Though not a monolayer, the GWs exhibit significantly enhanced fluorescence and photoluminescence. This enhancement may be attributed to abundant structural defects such as stacking faults and partial dislocations in the GWs, which are clearly observable in atomically resolved high resolution transmission electron microscopy and scanning transmission electron microscopy images. Moreover, GW-based phototransistor is found to deliver higher photocurrent than that based on monolayer film. These features of GWs provide a clue to microstructure engineering of monolayer WS2 for specific applications in (opto)electronics.

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